https://doi.org/10.1351/goldbook.09217
Surface region of a material under particle bombardment where the chemical state or physical structure is modified by the effects of the bombardment.
Notes:
- For silicon bombarded by
at near-normal incidence, after sputtering for a sufficient time to reach a steady state, the surface is converted to stoichiometric to a depth of around , with lower oxygen concentrations at greater depths. At , this is reduced to , these thicknesses being approximately twice the projected range. - The observed interface width (depth resolution) in secondary-ion mass spectrometry can be greater or smaller than the altered-layer thickness, depending on the analyte and bombarding-ion species.