resist polymer
@M03667@ material that, when irradiated, undergoes a marked change in @S05740@ in a given solvent or is ablated.
  1. A resist polymer under @I03255@ either forms patterns directly or undergoes chemical reactions leading to pattern formation after subsequent processing.
  2. A resist material that is optimized for use with @UT07492@ or @VT07496@ light, an electron beam, an ion beam, or X-rays is called a @P04651@, electron-beam resist, ion-beam resist, or X-ray resist, respectively.
  3. In a positive-tone resist, also called a positive resist, the material in the irradiated area not covered by a mask is removed, which results in an image with a pattern identical with that on the mask. In a negative-tone resist, also called a negative resist, the non-irradiated area is subsequently removed, which results in an image with a pattern that is the complement of that on the mask.
PAC, 2004, 76, 889. (Definitions of terms relating to reactions of polymers and to functional polymeric materials (IUPAC Recommendations 2003)) on page 903 [Terms] [Paper]